High fMAX deep submicron MOSFET

ABSTRACT

A method of forming a high f MAX  deep submicron MOSFET, comprising the following steps of. A substrate having a MOSFET formed thereon is provided. The MOSFET having a source and a drain and including a silicide portion over a gate electrode. A first ILD layer is formed over the substrate and the MOSFET. The first ILD layer is planarized to expose the silicide portion over the gate electrode. A metal gate portion is formed over the planarized first ILD layer and over the silicide portion over the gate electrode. The metal gate portion having a width substantially greater than the width of the silicide portion over the gate electrode. A second ILD layer is formed over the metal gate portion and the first ILD layer. A first metal contact is formed through the second ILD layer contacting the metal gate portion, and a second metal contact is formed through the second and first ILD layers contacting the drain completing the formation of the high f MAX  deep submicron MOSFET. Whereby the width of the metal gate portion reduces R g  and increases the f MAX  of the high f MAX  deep submicron MOSFET.

This is a continuation of patent application Ser. No. 09/932,730, filingdate Aug. 20, 2001 now U.S. Pat. No. 6,613,623, High Fmax Deep SubmicronMOSFET, assigned to the same assignee as the present invention.

FIELD OF THE INVENTION

The present invention relates generally to semiconductor fabrication andmore specifically to semiconductor MOSFET device fabrication.

BACKGROUND OF THE INVENTION

As MOSFET (metal oxide semiconductor field effect transistor) gatelength decreases, the unit power gain frequency (f_(MAX)) degrades dueto the up-scaling of parasitics.

U.S. Pat. No. 5,268,330 to Givens et al. describes a process forimproving sheet resistance of an integrated circuit device gate.

U.S. Pat. No. 5,554,544 to Hsu describes a field edge method ofmanufacturing a T-gate LDD pocket device.

U.S. Pat. No. 5,739,066 to Pan describes a semiconductor processingmethod of forming a conductive gate or gate line over a substrate.

U.S. Pat. No. 6,063,675 to Rodder describes a method of forming a MOSFETusing a disposable gate with a sidewall dielectric.

U.S. Pat. No. 5,943,560 to Chang et al. describes a method offabricating a thin film transistor using ultrahigh vacuum chemical vapordeposition (UHV/CVD) and chemical mechanical polishing (CMP) systems.

U.S. Pat. No. 5,731,239 to Wong et al. describes a method of fabricatingself-aligned silicide narrow gate electrodes for field effecttransistors (FET) having low sheet resistance.

SUMMARY OF THE INVENTION

Accordingly, it is an object of one or more embodiments of the presentinvention to provide an improved method of fabricating high f_(MAX) deepsubmicron MOSFETs.

Other objects will appear hereinafter.

It has now been discovered that the above and other objects of thepresent invention may be accomplished in the following manner.Specifically, a substrate having a MOSFET formed thereon is provided.The MOSFET having a source and a drain and including a silicide portionover a gate electrode. A first ILD layer is formed over the substrateand the MOSFET. The first ILD layer is planarized to expose the silicideportion over the gate electrode. A metal gate portion is formed over theplanarized first ILD layer and over the silicide portion over the gateelectrode. The metal gate portion having a width substantially greaterthan the width of the silicide portion over the gate electrode. A secondILD layer is formed over the metal gate portion and the first ILD layer.A first metal contact is formed through the second ILD layer contactingthe metal gate portion, and a second metal contact is formed through thesecond and first ILD layers contacting the drain completing theformation of the high f_(MAX) deep submicron MOSFET. Whereby the widthof the metal gate portion reduces R_(g) and increases the f_(MAX) of thehigh f_(MAX) deep submicron MOSFET.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be more clearly understood from the followingdescription taken in conjunction with the accompanying drawings in whichlike reference numerals designate similar or corresponding elements,regions and portions and in which:

FIGS. 1 to 6 schematically illustrate, in cross-sectional view, apreferred embodiment of the present invention with FIG. 6 being ofreduced size.

FIG. 7 is a plan view of a structure formed in accordance with apreferred embodiment and includes the structure of FIG. 6 taken alongline 6—6.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Unless otherwise specified, all structures, layers, steps, methods, etc.may be formed or accomplished by conventional steps or methods known inthe prior art.

Initial Structure

As shown in FIG. 1, substrate 10 is preferably a semiconductor substratecomprised of silicon and has formed thereon a low capacitance gate todrain (C_(gd)) metal oxide semiconductor field effect transistor(MOSFET) or a low C_(gd) MOSFET 12. Preferably gate re-oxidation is usedto form a smiling gate as at 14 to reduce both C_(gd) and capacitancegate to source (C_(gs)) with the formula to calculate the unit powergain frequency (f_(MAX)) is:f _(MAX) =f _(T)/((R _(s) +R _(g))/R _(out)+2πf _(T) R _(g) C_(gd))^(0.5)Where:

f_(MAX)=unit power gain frequency (the frequency where the maximum powergain of the transistor degrades to unity);

f_(T)=cut off frequency current gain;

R_(s)=resistance of source;

R_(g)=resistance of gate;

R_(out)=output resistance; and

C_(gd)=capacitance gate to drain.

Low C_(gd) MOSFET/CMOSFET 12 includes: gate oxide 16 under gateelectrode 18; LDD source/drain implants 20 and HDD source/drain implants22 within substrate 10; sidewall spacers 24 adjacent the side walls ofgate electrode 18; silicide portions 26, 28 over HDDs 22; and silicideportion 30 over gate electrode 18.

By using extra gate oxidation, the thickness of the gate oxide 16 nearthe drain and source region may be increased and therefore the parasiticcapacitance C_(gd) (capacitance between the gate and drain) can bereduced significantly. In this way, the f_(max) of the RF MOSFET/CMOSFETcan be improved.

Gate electrode 18 is preferably comprised of polysilicon. Sidewallspacers 24 are preferably comprised of silicon oxide. Silicide portions26, 28; 30 are preferably comprised of CoSi_(x), CoSi₂, or TiSi₂ and aremore preferably comprised of CoSi₂.

The LDD implant 20 depth is preferably from about 100 to 500 Å. The LDDions are preferably P or As ions at an LDD ion concentration ofpreferably from about 1E14 to 1E15 ions/cm². The HDD implant 22 depth ispreferably from about 200 to 900 Å. The HDD ions are preferably P or Asions at an LDD ion concentration of preferably from about 5E14 to 2E15ions/cm².

Gate electrode 18 is: preferably from about 500 to 5000 Å wide, is morepreferably from about 1000 to 3500 Å wide and is most preferably about0.13 μm wide; and is preferably from about 1000 to 3000 Å high and ismore preferably from about 1500 to 2200 Å high. Gate oxide 16 ispreferably from about 15 to 21 Å thick and is more preferably from about16 to 20 Å thick. Sidewall spacers 24 are preferably from about 500 to1500 Å wide and are more preferably from about 700 to 900 Å wide.Silicide portion 30 over gate electrode 18 is preferably from about 270to 330 Å thick, is more preferably from about 290 to 310 Å thick and ismost preferably about 300 Å thick.

ILD 1 Layer 34 Deposition

As shown in FIG. 2, dielectric layer 32 is preferably formed over thestructure of FIG. 1 to a thickness of preferably from about 270 to 330 Åthick, more preferably from about 290 to 310 Å and most preferably about300 Å thick. Layer 32 is less thick than like layers in previous suchstructures in which the thickness is about 1000 Å. The thinnerdielectric layer 32 in the present invention makes is easier to removeit from over top of the gate 18/silicide portion 30 (see below).

Dielectric layer 32 is preferably formed of Si₃N₄, SiON, SiO₂ or TiN andis more preferably comprised of Si₃N₄ or SiON and aids in protection ofthe structure during further processing. Dielectric layer 32 will behereafter referred to as Si₃N₄ layer 32 for the sake of brevity.

First inter-layer dielectric (ILD 1) layer 34 is then conventionallydeposited over Si₃N₄ layer 32 to a thickness of preferably from about2400 to 3000 Å and more preferably from about 2000 to 2200 Å. ILD 1layer 34 is preferably comprised of oxide, silicon oxide, USG or TEOSand is more preferably comprised of silicon oxide.

ILD 1 layer 34 also aids in protection of the structure during furtherprocessing.

It is noted that for the normalized etching rate (ZT):

-   ZT_(SiO2 ILD 1 layer 34)=1;-   ZT_(Si3N4 layer 32)=0.04; and-   ZT_(CoSi2 silicide layer 30)=0.02.    It is desired to keep CoSi₂ silicide layer 30 during CMP.    Chemical-Mechanical Polish (CMP) of ILD 1 Layer 34 and Si₃N₄ Layer    32

As shown in FIG. 3, ILD 1 layer 34 and Si₃N₄ layer 32 are removed in atwo step process (ILD 1 layer 34 then Si₃N₄ layer 32) from over CoSi₂silicide portion 30 over gate electrode 18, preferably bychemical-mechanical polishing (CMP), to form planarized ILD 1 layer 34′and partially removed Si₃N₄ layer 32′. Planarized ILD 1 layer 34′ issubstantially flush with the top of gate electrode 18 and has athickness of preferably from about 1700 to 1900 Å, more preferably about1800 Å.

It is noted that for the normalized etching rate (ZT):

-   ZT_(SiO2 ILD 1 layer 34)=1;-   ZT_(Si3N4 layer 32)=0.04; and-   ZT_(CoSi2 silicide layer 30)=0.02.    It is desired to keep CoSi₂ silicide layer 30 during CMP.

CoSi₂ silicide portion 30 serves as a stop layer to protect poly gateelectrode 18 due to its high resistance to the CMP (see above), andCoSi₂ silicide portion 30 is left essentially exposed over poly gateelectrode 18.

An H₃PO₄ solution may then be used to clean any remaining Si₃N₄ fromover CoSi₂ silicide portion 30 over gate electrode 18.

CoSi₂ silicide portion 30 over poly gate electrode 18 also serves asadhesion and a barrier layer between the subsequently formed metal gatelayer/portion 38 and poly gate electrode 18 (see below).

Metal Gate Portion 38 Formation

As shown in FIG. 4, a barrier layer 36 is preferably formed overplanarized ILD 1 layer 34′, the exposed portions of partially removedSi₃N₄ layer 32′ and CoSi₂ silicide portion 30 overlying poly gateelectrode 18. Barrier layer 36 is preferably comprised of TiN. Barrierlayer 36 has a thickness of preferably of from about 100 to 300 Å andmore preferably from about 150 to 200 Å.

In a key step of the invention, metal gate layer 38 is then is depositedover barrier layer 36 and metal gate layer 38, TiN barrier layer 36 andILD 1 layer 34′ are patterned to form the T-shaped metal gateportion/poly stack structure 40. The patterned may be done, for example,by forming a patterned photoresist layer (not shown) over unpatternedmetal gate layer 38 and then etching metal gate layer 38, TiN barrierlayer 36 and ILD 1 layer 34′. Metal gate portion 38 is wider than polygate electrode 18 and CoSi₂ silicide portion 30 overlying poly gateelectrode 18.

Metal gate layer/portion 38 is preferably comprised of tungsten (W),aluminum (Al), copper (Cu), titanium nitride (TiN) or gold (Au) and ismore preferably comprised of W.

Metal gate layer/portion 38 has a thickness of preferably from about1800 to 2200 Å, more preferably from about 1900 to 2100 Å and mostpreferably about 2000 Å.

In a key feature of the present invention, patterned metal gate portion38 has a width appreciably greater that the width of CoSi₂ silicideportion 30 capping poly gate electrode 18. The width of W metal gateportion 38 is preferably from about 500 to 8000 Å, more preferably fromabout 1000 to 3000 Å and most preferably from about 1800 to 2400 Å.

This wider W metal gate portion 38 results in a much lower R_(g)(resistance of gate) to increase f_(MAX) (unit power gain frequency)[recalling the formulaf_(MAX)=f_(T)/((R_(s)+R_(g))/R_(out)+2πf_(T)R_(g)C_(gd))^(0.5)].Further, the wider W metal gate portion 38 will not create an alignmentproblem between the metal to poly layers, i.e. the subsequently formedcontact 50 (see below) to W metal gate portion 38 will more easily alignto W metal gate portion 38 due to its increased width.

Schottky Contact 42

It is noted that the polysilicon gate electrode 18 contact 42 to CoSi₂silicide portion 30 and W metal gate portion 38 is a Schottky contactand does not pose a serious leakage problem.

ILD 2 Layer 44 Deposition

As shown in FIG. 5, second inter-layer dielectric (ILD 2) layer 44 isthen deposited over the structure, covering T-shaped metal gateportion/poly stack structure 40, to a thickness of preferably from about1000 to 5000 Å, more preferably from about 2000 to 4000 Å and mostpreferably from about 2500 to 3500 Å. ILD 2 layer 44 is preferablycomprised of oxide, silicon oxide, HDP or FSG and is more preferablycomprised of silicon oxide.

Due to the very thick dielectrics, i.e. ILD 1 layer 34 and ILD 2 layer44, the increase in Cgd (capacitance gate to drain) is negligible anddoes not appreciably increase f_(MAX) [again recalling the formulaf_(MAX)=f_(T)/((R_(s)+R_(g))/R_(out)+2πf_(T)R_(g)C_(gd))^(0.5)].

Formation of Metal Contacts 50, 52

As shown in FIG. 6, ILD 2 layer 44 is planarized to form planarized ILD2 layer 44′. Planarized ILD 2 layer 44′ is patterned to form: firstcontact trench 46 through planarized ILD 2 layer 44′ exposing a portionof W metal gate portion 38; and second contact trench 48 throughplanarized ILD 2 layer 44′, planarized ILD 1 layer 34″ and partiallyremoved Si₃N₄ layer 32′ exposing a portion of silicide portion 28 overdrain 54.

First contact trench 46 is preferably from about 1500 to 3000 Å wide; ismore preferably from about 1600 to 2800 Å wide and is most preferablyfrom about 1700 to 2000 Å wide. Second contact trench 48 is preferablyfrom about 1500 to 3000 Å wide; is more preferably from about 1000 to2500 Å wide and is most preferably from about 1600 to 2000 Å wide.

A metal layer is then deposited over the structure, filling first andsecond contact openings 46, 48. The metal layer is planarized to removethe excess metal from over the patterned ILD 2 layer 44′ forming firstmetal contact 50 within first contact trench 46 contacting W metal gateportion 38 and second metal contact 52 within second contact trench 48contacting silicide portion 28 over drain 54 to complete the highf_(MAX) deep submicron MOSFET device 60 of the present invention.

First and second metal contacts 50, 52 are preferably comprised oftungsten (W) or Cu and are more preferably comprised of W.

FIG. 7 is a plan view of a structure formed in accordance with apreferred embodiment and includes the structure of FIG. 6 taken alongline 6—6, i.e. FIG. 6 is a cross-sectional view of FIG. 7 taken alongline 6—6. A 0.16×0.16 μm contact will give a contact resistance (Rc) ofgreater than about 17 Ohm. A wider W metal stack gate (W metal gateportion 38/TiN metal barrier layer 36′ et al.) provides enough room toopen first contact trench 46 on top of W metal gate portion 38, i.e.alignment problems are essentially eliminated. This can significantlyreduce Rc while increasing f_(T) and f_(MAX) [once again recalling theformula f_(MAX)=f_(T)/((R_(s)+R_(g))/R_(out)+2πf_(T)R_(g)C_(gd))^(0.5)].

Advantages of the Present Invention

The advantages of one or more embodiments of the present inventioninclude:

-   1. reduced gate noise of the RF MOSFET;-   2. reduced gate resistance (R_(g)), resulting in a high maximum    oscillation frequency;-   3. a designer may select a longer unit electrode length than in the    conventional method where the designer was forced to use a very    short electrode length to reduce the gate resistance;-   4. by using extra gate oxidation, the thickness of the gate oxide    near the source and drain region can be increased so that the    parasitic capacitance (C_(gd)) (the capacitance between the gate and    drain) can be significantly reduced in which case the f_(max) of the    RF MOSFET/CMOSFET can be improved.

While particular embodiments of the present invention have beenillustrated and described, it is not intended to limit the invention,except as defined by the following claims.

1. A high f_(Max) deep submicron MOSFET structure, comprising: asubstrate; a MOSFET on the substrate; the MOSFET having a source and adrain and including a silicide portion over a gate electrode; a firstILD layer over the substrate and the MOSFET wherein the silicide portionover the gate electrode is exposed and the first ILD layer issubstantially flush with a top of the gate electrode; a metal gateportion: over the first ILD layer; and over the silicide portion overthe gate electrode; the metal gate portion having a width substantiallygreater than the width of the silicide portion over the gate electrode;a second ILD layer over the metal gate portion and the first ILD layer;a first metal contact through the second ILD layer contacting the metalgate portion; and a second metal contact through the second and firstILD layers contacting the drain completing the formation of the highf_(MAX) deep submicron MOSFET structure; whereby the width of the metalgate portion reduces R_(g) and increases the f_(MAX) of the high f_(MAX)deep submicron MOSFET structure.
 2. The structure of claim 1, includinga dielectric layer: over the substrate and MOSFET but not over thesilicide portion over the gate electrode; and under the first ILD layer.3. The structure of claim 1, including a dielectric layer: over thesubstrate and MOSFET but not over the silicide portion over the gateelectrode; and between the first ILD layer; the dielectric layer beingcomprised of Si₃N₄ or SiON.
 4. The structure of claim 1, wherein thegate electrode is comprised of polysilicon; the silicide portion overthe gate electrode is comprised of CoSix, CoSi₂, or TiSi₂; the first ILDlayer is comprised of oxide, silicon oxide, USG or TEOS; the metal gateportion is comprised of W, Al, Cu, TiN or Au; the second ILD iscomprised of oxide, silicon oxide, HDP or FSG; and the first and secondmetal contacts are each comprised of W or Cu.
 5. The structure of claim1, wherein the gate electrode is comprised of polysilicon; the silicideportion over the gate electrode is comprised of CoSix; the first ILDlayer is comprised of silicon oxide; the metal gate portion is comprisedof tungsten; the second ILD is comprised of silicon oxide; and the firstand second metal contacts each being comprised of tungsten.
 6. Thestructure of claim 1, wherein the gate electrode has a width of fromabout 500 to 5000 Å and the metal gate portion has a width of from about500 to 8000 Å.
 7. The structure of claim 1, wherein the gate electrodehas a width of from about 1000 to 3500 Å and the metal gate portion hasa width of from about 1000 to 3000 Å.
 8. The structure of claim 1,wherein the gate electrode has a width of about 0.13 μm and the metalgate portion has a width of from about 1800 to 2400 Å.
 9. The structureof claim 1, wherein the gate electrode has a height of from about 1000to 3000 Å; the silicide portion over the gate electrode has a thicknessof from about 270 to 330 Å; the first ILD layer has a thickness of fromabout 1700 to 1900 Å; and the metal gate portion has a thickness of fromabout 1800 to 2200 A.
 10. The structure of claim 1, wherein the gateelectrode has a height of from about 1500 to 2200 Å; the silicideportion over the gate electrode has a thickness of from about 290 to 310Å; the first ILD layer has a thickness of about 1800 Å; and the metalgate portion has a thickness of from about 1900 to 2100 Å.
 11. Thestructure of claim 1, wherein the gate electrode has a height of fromabout 1500 to 2200 Å; the silicide portion over the gate electrode has athickness of about 300 Å; the first ILD layer has a thickness of about1800 Å; and the metal gate portion has a thickness of about 2000 Å. 12.The structure of claim 1, wherein the MOSFET includes a source silicideportion over at least a portion of the source and a drain silicideportion over at least a portion the drain; and wherein the second metalcontact contacts the drain silicide portion.
 13. The structure of claim1, wherein the MOSFET includes a source CoSix silicide portion over atleast a portion of the source and a drain CoSix silicide portion over atleast a portion of the drain; and wherein the second metal contactcontacts the drain CoSix silicide portion.
 14. The structure of claim 1,wherein the first ILD is planarized.
 15. The structure of claim 1,wherein the high F_(MAX) deep submicron MOSFET structure is positionedwithin an RF circuit.
 16. The structure of claim 1, wherein the gateelectrode has a gate oxide thereunder; the gate oxide having a thicknessproximate the source and the drain to significantly reduce the parasiticcapacitance and increase the F_(MAX) of the high f_(MAX) deep submicronMOSFET structure.
 17. A high F_(MAX) deep submicron MOSFET structure,comprising: a substrate; a MOSFET on the substrate; the MOSFET having asource and a drain and including a silicide portion over a gateelectrode; the gate electrode having a width of from about 500 to 5000Å; a first ILD layer over the substrate and the MOSFET wherein thesilicide portion over the gate electrode is exposed and the first ILDlayer is substantially flush with a top of the gate electrode; a metalgate portion: over the first ILD layer; and over the silicide portionover the gate electrode; the metal gate portion having a width of fromabout 500 to 8000 Å; a second ILD layer over the metal gate portion andthe first ILD layer; a first metal contact through the second ILD layercontacting the metal gate portion; and a second metal contact throughthe second and first ILD layers contacting the drain completing theformation of the high F_(MAX) deep submicron MOSFET structure; wherebythe width of the metal gate portion reduces R_(g) and increases thef_(MAX) of the high F_(MAX) deep submicron MOSFET structure.
 18. Thestructure of claim 17, including a dielectric layer: over the substrateand MOSFET but not over the silicide portion over the gate electrode;and under the first ILD layer.
 19. The structure of claim 17, includinga dielectric layer: over the substrate and MOSFET but not over thesilicide portion over the gate electrode; and between the first ILDlayer; the dielectric layer being comprised of Si₃N₄ or SiON.
 20. Thestructure of claim 17, wherein the gate electrode is comprised ofpolysilicon; the silicide portion over the gate electrode is comprisedof CoSix, CoSi₂, or TiSi₂; the first ILD layer is comprised of oxide,silicon oxide, USG or TEOS; the metal gate portion is comprised of W,Al, Cu, TiN or Au; the second ILD is comprised of oxide, silicon oxide,HDP or FSG; and the first and second metal contacts are each comprisedof W or Cu.
 21. The structure of claim 17, wherein the gate electrode iscomprised of polysilicon; the silicide portion over the gate electrodeis comprised of CoSix; the first ILD layer is comprised of siliconoxide; the metal gate portion is comprised of tungsten; the second ILDis comprised of silicon oxide; and the first and second metal contactseach being comprised of tungsten.
 22. The structure of claim 17, whereinthe gate electrode has a width of from about 1000 to 3500 Å and themetal gate portion has a width of from about 1000 to 3000 Å.
 23. Thestructure of claim 17, wherein the gate electrode has a width of about0.13 μm and the metal gate portion has a width of from about 1800 to2400 Å.
 24. The structure of claim 17, wherein the gate electrode has aheight of from about 1000 to 3000 Å; the silicide portion over the gateelectrode has a thickness of from about 270 to 330 Å; the first ILDlayer has a thickness of from about 1700 to 1900 Å; and the metal gateportion has a thickness of from about 1800 to 2200 Å.
 25. The structureof claim 17, wherein the gate electrode has a height of from about 1500to 2200 Å; the silicide portion over the gate electrode has a thicknessof from about 290 to 310 Å; the first ILD layer has a thickness of about1800 Å; and the metal gate portion has a thickness of from about 1900 to2100 Å.
 26. The structure of claim 17, wherein the gate electrode has aheight of from about 1500 to 2200 Å; the silicide portion over the gateelectrode has a thickness of about 300 Å; the first ILD layer has athickness of about 1800 Å; and the metal gate portion has a thickness ofabout 2000 Å.
 27. The structure of claim 17, wherein the MOSFET includesa source silicide portion over at least a portion of the source and adrain silicide portion over at least a portion of the drain; and whereinthe second metal contact contacts the drain silicide portion.
 28. Thestructure of claim 17, wherein the MOSFET includes a source CoSixsilicide portion over at least a portion of the source and a drain CoSixsilicide portion over at least a portion of the drain; and wherein thesecond metal contact contacts the drain CoSix silicide portion.
 29. Thestructure of claim 17, wherein the high F_(MAX) deep submicron MOSFETstructure is positioned within an RF circuit.
 30. The structure of claim17, wherein the gate electrode has a gate oxide thereunder; the gateoxide having a thickness proximate the source and the drain tosignificantly reduce the parasitic capacitance and increase the f_(MAX)of the high f_(MAX) deep submicron MOSFET structure.
 31. The structureof claim 17, wherein the first ILD is planarized.
 32. A high f_(MAX),deep submicron MOSFET structure, comprising: a substrate; a MOSFET onthe substrate; the MOSFET having a source and a drain and including asilicide portion over a gate electrode; a first ILD layer over thesubstrate and the MOSFET wherein the silicide portion over the gateelectrode is exposed and the first ILD layer is substantially flush witha top of the gate electrode; a metal gate portion: over the first ILDlayer; and over the silicide portion over the gate electrode; the metalgate portion having a width substantially greater than the width of thesilicide portion over the gate electrode; whereby the width of the metalgate portion reduces R_(g) and increases the f_(MAX) of the high f_(MAX)deep submicron MOSFET structure.
 33. The structure of claim 32,including a dielectric layer: over the substrate and MOSFET but not overthe silicide portion over the gate electrode; and under the first ILDlayer.
 34. The structure of claim 32, including a dielectric layer: overthe substrate and MOSFET but not over the silicide portion over the gateelectrode; and between the first ILD layer; the dielectric layer beingcomprised of Si₃N₄ or SiON.
 35. The structure of claim 32, wherein thegate electrode is comprised of polysilicon; the silicide portion overthe gate electrode is comprised of CoSix, CoSi₂, or TiSi₂; the first ILDlayer is comprised of oxide, silicon oxide, USG or TEOS; the metal gateportion is comprised of W, Al, Cu, TiN or Au.
 36. The structure of claim32, wherein the gate electrode is comprised of polysilicon; the silicideportion over the gate electrode is comprised of CoSix; the first ILDlayer is comprised of silicon oxide; the metal gate portion is comprisedof tungsten.
 37. The structure of claim 32, wherein the gate electrodehas a width of from about 500 to 5000 Å and the metal gate portion has awidth of from about 500 to 8000 Å.
 38. The structure of claim 32,wherein the gate electrode has a width of from about 1000 to 3500 Å andthe metal gate portion has a width of from about 1000 to 3000 Å.
 39. Thestructure of claim 32, wherein the gate electrode has a width of about0.13 μm and the metal gate portion has a width of from about 1800 to2400 Å.
 40. The structure of claim 32, wherein the gate electrode has aheight of from about 1000 to 3000 Å; the silicide portion over the gateelectrode has a thickness of from about 270 to 330 Å; the first ILDlayer has a thickness of from about 1700 to 1900 Å; and the metal gateportion has a thickness of from about 1800 to 2200 Å.
 41. The structureof claim 32, wherein the gate electrode has a height of from about 1500to 2200 Å; the silicide portion over the gate electrode has a thicknessof from about 290 to 310 Å; the first ILD layer has a thickness of about1800 Å; and the metal gate portion has a thickness of from about 1900 to2100 Å.
 42. The structure of claim 32, wherein the gate electrode has aheight of from about 1500 to 2200 Å; the silicide portion over the gateelectrode has a thickness of about 300 Å; the first ILD layer has athickness of about 1800 Å; and the metal gate portion has a thickness ofabout 2000 Å.
 43. The structure of claim 32, wherein the MOSFET includesa source silicide portion over at least a portion of the source and adrain silicide portion over at least a portion of the drain.
 44. Thestructure of claim 32, wherein the MOSFET includes a source CoSixsilicide portion over at least a portion of the source and a drain CoSixsilicide portion over at least a portion of the drain.
 45. The structureof claim 32, wherein the first ILD is planarized.
 46. The structure ofclaim 32, wherein the high f_(MAX) deep submicron MOSFET structure ispositioned within an RF circuit.
 47. The structure of claim 32, whereinthe gate electrode has a gate oxide thereunder; the gate oxide having athickness proximate the source and the drain to significantly reduce theparasitic capacitance and increase the f_(MAX) of the high f_(MAX) deepsubmicron MOSFET structure.
 48. The structure of claim 32, furthercomprising: a second ILD layer over the metal gate portion and the firstILD layer; a first metal contact through the second ILD layer contactingthe metal gate portion; and a second metal contact through the secondand first ILD layers contacting the drain completing the formation ofthe high f_(MAX) deep submicron MOSFET structure.
 49. The structure ofclaim 48, wherein the first metal contact is a trench contact.
 50. Thestructure of claim 48, wherein the second metal contact is a trenchcontact.